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40m Omega /1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications
40m Omega /1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications
40m Omega /1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications
Ohoka, A. (author) / Horikawa, N. (author) / Kiyosawa, T. (author) / Sorada, H. (author) / Uchida, M. (author) / Kanzawa, Y. (author) / Sawada, K. (author) / Ueda, T. (author) / Fujii, E. (author) / Okumura, H.
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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