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A platform for research: civil engineering, architecture and urbanism
1700V, 5.5mOhm-cm^2 4H-SiC DMOSFET with Stable 225^oC Operation
1700V, 5.5mOhm-cm^2 4H-SiC DMOSFET with Stable 225^oC Operation
1700V, 5.5mOhm-cm^2 4H-SiC DMOSFET with Stable 225^oC Operation
Matocha, K. (author) / Chatty, K. (author) / Banerjee, S. (author) / Rowland, L.B. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H. / Hatayama, T.
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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