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40m Omega /1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications
40m Omega /1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications
40m Omega /1700V DioMOS (Diode in SiC MOSFET) for High Power Switching Applications
Ohoka, A. (Autor:in) / Horikawa, N. (Autor:in) / Kiyosawa, T. (Autor:in) / Sorada, H. (Autor:in) / Uchida, M. (Autor:in) / Kanzawa, Y. (Autor:in) / Sawada, K. (Autor:in) / Ueda, T. (Autor:in) / Fujii, E. (Autor:in) / Okumura, H.
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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