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    Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET

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    Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET

    New search for: Furuhashi, M.
    New search for: Tanioka, T.
    New search for: Imaizumi, M.
    New search for: Miura, N.
    New search for: Yamakawa, S.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

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    Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET

    New search for: Furuhashi, M.
    New search for: Tanioka, T.
    New search for: Imaizumi, M.
    New search for: Miura, N.
    New search for: Yamakawa, S.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

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    Document information
    Title:

    Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET

    Contributors:

    Furuhashi, M. (author) / Tanioka, T. (author) / Imaizumi, M. (author) / Miura, N. (author) / Yamakawa, S. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H.

    Published in:

    Silicon Carbide and Related Materials 2013 ; 985-988

    MATERIALS SCIENCE FORUM ; 778/780

    Publication date:

    2014-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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