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Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET
Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET
Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET
Furuhashi, M. (Autor:in) / Tanioka, T. (Autor:in) / Imaizumi, M. (Autor:in) / Miura, N. (Autor:in) / Yamakawa, S. (Autor:in) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H.
01.01.2014
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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