A platform for research: civil engineering, architecture and urbanism
High Temperature Resistant Packaging for SiC Power Devices Using Interconnections Formed by Ni Micro-Electroplating
High Temperature Resistant Packaging for SiC Power Devices Using Interconnections Formed by Ni Micro-Electroplating
High Temperature Resistant Packaging for SiC Power Devices Using Interconnections Formed by Ni Micro-Electroplating
Kato, N. (author) / Shigenaga, A. (author) / Tatsumi, K. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H. / Hatayama, T. / Matsuura, H.
Silicon Carbide and Related Materials 2013 ; 1110-1113
MATERIALS SCIENCE FORUM ; 778/780
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Z-axis Interconnections for Next Generation Packaging
British Library Online Contents | 2011
|Packaging Materials and Approaches for High Temperature SiC Power Devices
British Library Online Contents | 2004
|Convenient high-sealing and high-temperature-resistant packaging method
European Patent Office | 2020
|Micro-Anode Guided Electroplating (MAGE) Control System
British Library Online Contents | 2006
|