Interface sulfur passivation using H"2S annealing for atomic-layer-deposited Al"2O"3 films on an ultrathin-body In"0"."5"3Ga"0"."4"7As-on-insulator: Fid-Bau Portal

Interface sulfur passivation using H"2S annealing for atomic-layer-deposited Al"2O"3 films on an ultrathin-body In"0"."5"3Ga"0"."4"7As-on-insulator

Jin, H. S. / Cho, Y. J. / Lee, S. M. / Kim, D. H. / Kim, D. W. / Lee, D. / Park, J. B. / Won, J. Y. / Lee, M. J. / Cho, S. H. / ... [more]

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Interface sulfur passivation using H"2S annealing for atomic-layer-deposited Al"2O"3 films on an ultrathin-body In"0"."5"3Ga"0"."4"7As-on-insulator

Jin, H. S. / Cho, Y. J. / Lee, S. M. / Kim, D. H. / Kim, D. W. / Lee, D. / Park, J. B. / Won, J. Y. / Lee, M. J. / Cho, S. H. / ... [more]

Interface sulfur passivation using H"2S annealing for atomic-layer-deposited Al"2O"3 films on an ultrathin-body In"0"."5"3Ga"0"."4"7As-on-insulator

Jin, H. S. / Cho, Y. J. / Lee, S. M. / Kim, D. H. / Kim, D. W. / Lee, D. / Park, J. B. / Won, J. Y. / Lee, M. J. / Cho, S. H. / ... [more]

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Title:

Interface sulfur passivation using H"2S annealing for atomic-layer-deposited Al"2O"3 films on an ultrathin-body In"0"."5"3Ga"0"."4"7As-on-insulator

Contributors:

Jin, H. S. (author) / Cho, Y. J. (author) / Lee, S. M. (author) / Kim, D. H. (author) / Kim, D. W. (author) / Lee, D. (author) / Park, J. B. (author) / Won, J. Y. (author) / Lee, M. J. (author) / Cho, S. H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 315 ; 178-183

Publication date:

2014-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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