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Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors

Zou, X. / Wang, J. / Chiu, C. H. / Wu, Y. / Xiao, X. / Jiang, C. / Wu, W. W. / Mai, L. / Chen, T. / Li, J.

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Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors

Zou, X. / Wang, J. / Chiu, C. H. / Wu, Y. / Xiao, X. / Jiang, C. / Wu, W. W. / Mai, L. / Chen, T. / Li, J.

Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors

Zou, X. / Wang, J. / Chiu, C. H. / Wu, Y. / Xiao, X. / Jiang, C. / Wu, W. W. / Mai, L. / Chen, T. / Li, J.

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Document information

Title:

Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors

Contributors:

Zou, X. (author) / Wang, J. (author) / Chiu, C. H. (author) / Wu, Y. (author) / Xiao, X. (author) / Jiang, C. (author) / Wu, W. W. (author) / Mai, L. (author) / Chen, T. (author) / Li, J. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 26 ; 6255-6261

Publication date:

2014-01-01

Size:

7 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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