Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing: Fid-Bau Portal

Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

Kovacevic, I. / Pivac, B. / Dubcek, P. / Zorc, H. / Radic, N. / Bernstorff, S. / Campione, M. / Sassella, A.

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Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

Kovacevic, I. / Pivac, B. / Dubcek, P. / Zorc, H. / Radic, N. / Bernstorff, S. / Campione, M. / Sassella, A.

Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

Kovacevic, I. / Pivac, B. / Dubcek, P. / Zorc, H. / Radic, N. / Bernstorff, S. / Campione, M. / Sassella, A.

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Title:

Formation of Ge islands from a Ge layer on Si substrate during post-growth annealing

Contributors:

Kovacevic, I. (author) / Pivac, B. (author) / Dubcek, P. (author) / Zorc, H. (author) / Radic, N. (author) / Bernstorff, S. (author) / Campione, M. (author) / Sassella, A. (author)

Published in:

APPLIED SURFACE SCIENCE ; 253 ; 3034-3040

Publication date:

2007-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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