Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD): Fid-Bau Portal

Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD)

Nogay, G. / Saleh, Z. M. / Ozkol, E. / Turan, R.

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Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD)

Nogay, G. / Saleh, Z. M. / Ozkol, E. / Turan, R.

Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD)

Nogay, G. / Saleh, Z. M. / Ozkol, E. / Turan, R.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Vertically aligned Si nanocrystals embedded in amorphous Si matrix prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD)

Contributors:

Nogay, G. (author) / Saleh, Z. M. (author) / Ozkol, E. (author) / Turan, R. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 196 ; 28-34

Publication date:

2015-01-01

Size:

7 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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