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Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Gad, K. M. / Vössing, D. / Balamou, P. / Hiller, D. / Stegemann, B. / Angermann, H. / Kasemann, M.

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Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Gad, K. M. / Vössing, D. / Balamou, P. / Hiller, D. / Stegemann, B. / Angermann, H. / Kasemann, M.

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Gad, K. M. / Vössing, D. / Balamou, P. / Hiller, D. / Stegemann, B. / Angermann, H. / Kasemann, M.

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Document information

Title:

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Contributors:

Gad, K. M. (author) / Vössing, D. (author) / Balamou, P. (author) / Hiller, D. (author) / Stegemann, B. (author) / Angermann, H. (author) / Kasemann, M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 353 ; 1269-1276

Publication date:

2015-01-01

Size:

8 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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