Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation: Fid-Bau Portal

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Gad, Karim M. / Vössing, Daniel / Balamou, Patrice / Hiller, Daniel / Stegemann, Bert / Angermann, Heike / Kasemann, Martin

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Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Gad, Karim M. / Vössing, Daniel / Balamou, Patrice / Hiller, Daniel / Stegemann, Bert / Angermann, Heike / Kasemann, Martin

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Gad, Karim M. / Vössing, Daniel / Balamou, Patrice / Hiller, Daniel / Stegemann, Bert / Angermann, Heike / Kasemann, Martin

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Document information

Title:

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Contributors:

Gad, Karim M. (author) / Vössing, Daniel (author) / Balamou, Patrice (author) / Hiller, Daniel (author) / Stegemann, Bert (author) / Angermann, Heike (author) / Kasemann, Martin (author)

Published in:

Applied surface science ; 353 ; 1269-1276

Publication date:

2015-01-01

Size:

8 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.44

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