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    Subsurface damage mechanism of high speed grinding process in single crystal silicon revealed by atomistic simulations

    New search for: Li, J.
    New search for: Fang, Q.
    New search for: Zhang, L.
    New search for: Liu, Y.

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    Subsurface damage mechanism of high speed grinding process in single crystal silicon revealed by atomistic simulations

    New search for: Li, J.
    New search for: Fang, Q.
    New search for: Zhang, L.
    New search for: Liu, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Subsurface damage mechanism of high speed grinding process in single crystal silicon revealed by atomistic simulations

    New search for: Li, J.
    New search for: Fang, Q.
    New search for: Zhang, L.
    New search for: Liu, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Subsurface damage mechanism of high speed grinding process in single crystal silicon revealed by atomistic simulations

    Contributors:

    Li, J. (author) / Fang, Q. (author) / Zhang, L. (author) / Liu, Y. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 324 ; 464-474

    Publication date:

    2015-01-01

    Size:

    11 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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