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Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
Jung, H. (author) / Kim, W. H. (author) / Oh, I. K. (author) / Lee, C. W. (author) / Lansalot-Matras, C. (author) / Lee, S. J. (author) / Myoung, J. M. (author) / Lee, H. B. (author) / Kim, H. (author)
JOURNAL OF MATERIALS SCIENCE ; 51 ; 5082-5091
2016-01-01
10 pages
Article (Journal)
English
DDC:
620.11
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