Structural and electrical properties of ternary Ru-AlN thin films prepared by plasma-enhanced atomic layer deposition: Fid-Bau Portal

Structural and electrical properties of ternary Ru-AlN thin films prepared by plasma-enhanced atomic layer deposition

Shin, Y. R. / Kwack, W. S. / Park, Y. C. / Kim, J. H. / Shin, S. Y. / Moon, K. I. / Lee, H. W. / Kwon, S. H.

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Structural and electrical properties of ternary Ru-AlN thin films prepared by plasma-enhanced atomic layer deposition

Shin, Y. R. / Kwack, W. S. / Park, Y. C. / Kim, J. H. / Shin, S. Y. / Moon, K. I. / Lee, H. W. / Kwon, S. H.

Structural and electrical properties of ternary Ru-AlN thin films prepared by plasma-enhanced atomic layer deposition

Shin, Y. R. / Kwack, W. S. / Park, Y. C. / Kim, J. H. / Shin, S. Y. / Moon, K. I. / Lee, H. W. / Kwon, S. H.

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Document information

Title:

Structural and electrical properties of ternary Ru-AlN thin films prepared by plasma-enhanced atomic layer deposition

Contributors:

Shin, Y. R. (author) / Kwack, W. S. (author) / Park, Y. C. (author) / Kim, J. H. (author) / Shin, S. Y. (author) / Moon, K. I. (author) / Lee, H. W. (author) / Kwon, S. H. (author)

Published in:

MATERIALS RESEARCH BULLETIN ; 47 ; 790-793

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0025-5408

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11 / 620

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