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    Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

    New search for: Wang, H.
    New search for: Chen, C.
    New search for: Pan, M.
    New search for: Sun, Y.
    New search for: Yang, X.

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    Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

    New search for: Wang, H.
    New search for: Chen, C.
    New search for: Pan, M.
    New search for: Sun, Y.
    New search for: Yang, X.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

    New search for: Wang, H.
    New search for: Chen, C.
    New search for: Pan, M.
    New search for: Sun, Y.
    New search for: Yang, X.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride

    Contributors:

    Wang, H. (author) / Chen, C. (author) / Pan, M. (author) / Sun, Y. (author) / Yang, X. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 357 ; 1991-1995

    Publication date:

    2015-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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