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Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride
Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride
Light-induced enhancement of the minority carrier lifetime in boron-doped Czochralski silicon passivated by doped silicon nitride
APPLIED SURFACE SCIENCE ; 357 ; 1991-1995
01.01.2015
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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