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Silicon epitaxy on H-terminated Si (100) surfaces at 250°C

Deng, X. / Namboodiri, P. / Li, K. / Wang, X. / Stan, G. / Myers, A. F. / Cheng, X. / Li, T. / Silver, R. M.

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Silicon epitaxy on H-terminated Si (100) surfaces at 250°C

Deng, X. / Namboodiri, P. / Li, K. / Wang, X. / Stan, G. / Myers, A. F. / Cheng, X. / Li, T. / Silver, R. M.

Silicon epitaxy on H-terminated Si (100) surfaces at 250°C

Deng, X. / Namboodiri, P. / Li, K. / Wang, X. / Stan, G. / Myers, A. F. / Cheng, X. / Li, T. / Silver, R. M.

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Document information

Title:

Silicon epitaxy on H-terminated Si (100) surfaces at 250°C

Contributors:

Deng, X. (author) / Namboodiri, P. (author) / Li, K. (author) / Wang, X. (author) / Stan, G. (author) / Myers, A. F. (author) / Cheng, X. (author) / Li, T. (author) / Silver, R. M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 378 ; 301-307

Publication date:

2016-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

Deng, Xiao / Namboodiri, Pradeep / Li, Kai et al. | British Library Online Contents | 2016

Initial stage of oxidation of hydrogen-terminated silicon surfaces

Hattori, T. / Aiba, T. / Iijima, E. et al. | British Library Online Contents | 1996

Silicon-kicking-out mechanism in initial oxide formation on hydrogen-terminated silicon (100) surfaces

Kageshima, H. / Shiraishi, K. | British Library Online Contents | 1998

Atomic-layer selective deposition of silicon nitride on hydrogen-terminated Si surfaces

Yokoyama, S. / Ikeda, N. / Kajikawa, K. et al. | British Library Online Contents | 1998

Effect of metal interaction on the Schottky barrier height on adsorbate-terminated silicon surfaces

Li, Y. / Long, W. / Tung, R. T. | British Library Online Contents | 2013