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Silicon epitaxy on H-terminated Si (100) surfaces at 250°C
Silicon epitaxy on H-terminated Si (100) surfaces at 250°C
Silicon epitaxy on H-terminated Si (100) surfaces at 250°C
Deng, X. (author) / Namboodiri, P. (author) / Li, K. (author) / Wang, X. (author) / Stan, G. (author) / Myers, A. F. (author) / Cheng, X. (author) / Li, T. (author) / Silver, R. M. (author)
APPLIED SURFACE SCIENCE ; 378 ; 301-307
2016-01-01
7 pages
Article (Journal)
English
DDC:
621.35
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Silicon epitaxy on H-terminated Si (100) surfaces at 250°C
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