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Silicon epitaxy on H-terminated Si (100) surfaces at 250°C
Silicon epitaxy on H-terminated Si (100) surfaces at 250°C
Silicon epitaxy on H-terminated Si (100) surfaces at 250°C
Deng, Xiao (author) / Namboodiri, Pradeep (author) / Li, Kai (author) / Wang, Xiqiao (author) / Stan, Gheorghe (author) / Myers, Alline F. (author) / Cheng, Xinbin (author) / Li, Tongbao (author) / Silver, Richard M. (author)
Applied surface science ; 378 ; 301-307
2016-01-01
7 pages
Article (Journal)
English
DDC:
620.44
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