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    Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane

    New search for: Latha, H.K.E.
    New search for: Udayakumar, A.
    New search for: Prasad, V. Siddeswara

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    Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane

    New search for: Latha, H.K.E.
    New search for: Udayakumar, A.
    New search for: Prasad, V. Siddeswara

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane

    New search for: Latha, H.K.E.
    New search for: Udayakumar, A.
    New search for: Prasad, V. Siddeswara

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Microstructure and electrical properties of nitrogen doped 3C–SiC thin films deposited using methyltrichlorosilane

    Contributors:

    Latha, H.K.E. (author) / Udayakumar, A. (author) / Prasad, V. Siddeswara (author)

    Published in:

    Materials science in semiconductor processing ; 29 ; 117-123

    Publication date:

    2015-01-01

    Size:

    7 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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