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Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities
Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities
Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities
Stegemann, Bert (author) / Gad, Karim M. (author) / Balamou, Patrice (author) / Sixtensson, Daniel (author) / Vössing, Daniel (author) / Kasemann, Martin (author) / Angermann, Heike (author)
Applied surface science ; 395 ; 78-85
2017-01-01
8 pages
Article (Journal)
English
DDC:
620.44
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