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Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities
Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities
Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities
Stegemann, Bert (Autor:in) / Gad, Karim M. (Autor:in) / Balamou, Patrice (Autor:in) / Sixtensson, Daniel (Autor:in) / Vössing, Daniel (Autor:in) / Kasemann, Martin (Autor:in) / Angermann, Heike (Autor:in)
Applied surface science ; 395 ; 78-85
01.01.2017
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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