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A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs
A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs
A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs
Deng, Xiaochuan (author) / Guo, Yuanxu (author) / Dai, Tianxiang (author) / Li, Chengzhan (author) / Chen, Ximing (author) / Chen, Wanjun (author) / Zhang, Yourun (author) / Zhang, Bo (author)
Materials science in semiconductor processing ; 68 ; 108-113
2017-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
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