Fabrication and Simulation of 4H-SiC PiN Diodes Having Mesa Guard Ring Edge Termination

Sankin, I. / Dufrene, J. B. / Merrett, J. N. et al. | British Library Online Contents | 2003

Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation

Vassilevski, K. V. / Horsfall, A. B. / Johnson, C. M. et al. | British Library Online Contents | 2004

Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination

Sheridan, D. C. / Niu, G. / Merrett, J. N. et al. | British Library Online Contents | 2000

Demonstration of High-Power X-Band Oscillation in p^+/n^-/n^+ 4H-SiC IMPATT Diodes with Guard-Ring Termination

Ono, S. / Arai, M. / Kimura, C. | British Library Online Contents | 2005

A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs

Deng, Xiaochuan / Guo, Yuanxu / Dai, Tianxiang et al. | British Library Online Contents | 2017