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Ultrathin SiO2 layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO2/Si interface for crystalline Si solar cells
Ultrathin SiO2 layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO2/Si interface for crystalline Si solar cells
Ultrathin SiO2 layer formed by the nitric acid oxidation of Si (NAOS) method to improve the thermal-SiO2/Si interface for crystalline Si solar cells
Matsumoto, Taketoshi (author) / Nakajima, Hiroki (author) / Irishika, Daichi (author) / Nonaka, Takaaki (author) / Imamura, Kentaro (author) / Kobayashi, Hikaru (author)
Applied surface science ; 395 ; 56-60
2017-01-01
5 pages
Article (Journal)
English
DDC:
620.44
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