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Low temperature fabrication of 510nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method
Low temperature fabrication of 510nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method
Low temperature fabrication of 510nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method
Fukaya, Y. (author) / Yanase, T. (author) / Kubota, Y. (author) / Imai, S. (author) / Matsumoto, T. (author) / Kobayashi, H. (author)
APPLIED SURFACE SCIENCE ; 256 ; 5610-5613
2010-01-01
4 pages
Article (Journal)
English
DDC:
621.35
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