A platform for research: civil engineering, architecture and urbanism
Growth of high quality n-Al0.5Ga0.5N thick films by MOCVD
Growth of high quality n-Al0.5Ga0.5N thick films by MOCVD
Growth of high quality n-Al0.5Ga0.5N thick films by MOCVD
He, Chenguang (author) / Qin, Zhixin (author) / Xu, Fujun (author) / Zhang, Lisheng (author) / Wang, Mingxing (author) / Hou, Mengjun (author) / Guo, Weiwei (author) / Zhang, Shan (author) / Wang, Xinqiang (author) / Shen, Bo (author)
MATERIALS LETTERS ; 176 ; 298-300
2016-01-01
3 pages
Article (Journal)
Unknown
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Growth of high quality n-Al0.5Ga0.5N thick films by MOCVD
British Library Online Contents | 2016
|Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer
British Library Online Contents | 2016
|Crack-free Al0.5Ga0.5N epilayer grown on SiC substrate by in situ SiNx interlayer
British Library Online Contents | 2016
|MOCVD growth and characterization of vanadium dioxide films
British Library Online Contents | 2017
|Growth temperature dependences of InN films grown by MOCVD
British Library Online Contents | 2008
|