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    Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study

    New search for: Iizuka, Shota
    New search for: Asayama, Yoshihiro
    New search for: Nakayama, Takashi

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    Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study

    New search for: Iizuka, Shota
    New search for: Asayama, Yoshihiro
    New search for: Nakayama, Takashi

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study

    New search for: Iizuka, Shota
    New search for: Asayama, Yoshihiro
    New search for: Nakayama, Takashi

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study

    Contributors:

    Iizuka, Shota (author) / Asayama, Yoshihiro (author) / Nakayama, Takashi (author)

    Published in:

    Materials science in semiconductor processing ; 70 ; 279-282

    Publication date:

    2017-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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