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Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study
Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study
Tunneling current characteristics by Al+N isoelectronic traps in Si-TFET; first-principles study
Iizuka, Shota (Autor:in) / Asayama, Yoshihiro (Autor:in) / Nakayama, Takashi (Autor:in)
Materials science in semiconductor processing ; 70 ; 279-282
01.01.2017
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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