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    Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition

    New search for: Altuntas, Halit
    New search for: Kaplan, Kemal

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    Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition

    New search for: Altuntas, Halit
    New search for: Kaplan, Kemal

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition

    New search for: Altuntas, Halit
    New search for: Kaplan, Kemal

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition

    Contributors:

    Altuntas, Halit (author) / Kaplan, Kemal (author)

    Published in:

    Materials science in semiconductor processing ; 86 ; 111-114

    Publication date:

    2018-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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