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Silicon epitaxy on H-terminated Si (100) surfaces at 250°C
Silicon epitaxy on H-terminated Si (100) surfaces at 250°C
Silicon epitaxy on H-terminated Si (100) surfaces at 250°C
Deng, Xiao (Autor:in) / Namboodiri, Pradeep (Autor:in) / Li, Kai (Autor:in) / Wang, Xiqiao (Autor:in) / Stan, Gheorghe (Autor:in) / Myers, Alline F. (Autor:in) / Cheng, Xinbin (Autor:in) / Li, Tongbao (Autor:in) / Silver, Richard M. (Autor:in)
Applied surface science ; 378 ; 301-307
01.01.2016
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.44
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