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The electronic structure peculiarities of a strained silicon layer in silicon-on-insulator: Experimental and theoretical data

Terekhov, V.A. / Nesterov, D.N. / Domashevskaya, E.P. / Geraskina, E.V. / Manyakin, M.D. / Kurganskii, S.I. / Kamayev, G.N. / Antonenko, A.H. / Turishchev, S.Yu.

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The electronic structure peculiarities of a strained silicon layer in silicon-on-insulator: Experimental and theoretical data

Terekhov, V.A. / Nesterov, D.N. / Domashevskaya, E.P. / Geraskina, E.V. / Manyakin, M.D. / Kurganskii, S.I. / Kamayev, G.N. / Antonenko, A.H. / Turishchev, S.Yu.

The electronic structure peculiarities of a strained silicon layer in silicon-on-insulator: Experimental and theoretical data

Terekhov, V.A. / Nesterov, D.N. / Domashevskaya, E.P. / Geraskina, E.V. / Manyakin, M.D. / Kurganskii, S.I. / Kamayev, G.N. / Antonenko, A.H. / Turishchev, S.Yu.

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Title:

The electronic structure peculiarities of a strained silicon layer in silicon-on-insulator: Experimental and theoretical data

Contributors:

Terekhov, V.A. (author) / Nesterov, D.N. (author) / Domashevskaya, E.P. (author) / Geraskina, E.V. (author) / Manyakin, M.D. (author) / Kurganskii, S.I. (author) / Kamayev, G.N. (author) / Antonenko, A.H. (author) / Turishchev, S.Yu. (author)

Published in:

Applied surface science ; 382 ; 331-335

Publication date:

2016-01-01

Size:

5 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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