Current Collapse Characteristic of AlGaN/GaN MIS-HEMT

Yagi, S. / Shimizu, M. / Yano, Y. et al. | British Library Online Contents | 2009

Characterization of AlGaN/GaN HEMT Devices Grown by MBE

MacElwee, T. W. / Bardwell, J. A. / Tang, H. et al. | British Library Online Contents | 2000

Impact of Ir gate interfacial oxide layers on performance of AlGaN/GaN HEMT

Vallo, M. / Lalinsky, T. / Dobrocka, E. et al. | British Library Online Contents | 2013

Enhanced Sensitivity of Pt/NiO Gate Based AlGaN/GaN C-HEMT Hydrogen Sensor

Ryger, I. / Vanko, G. / Lalinsky, T. et al. | British Library Online Contents | 2014

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)

Neuberger, R. / Muller, G. / Eickhoff, M. et al. | British Library Online Contents | 2002