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    Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks

    New search for: Liang, Shuang
    New search for: He, Gang
    New search for: Wang, Die
    New search for: Qiao, Fen

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    Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks

    New search for: Liang, Shuang
    New search for: He, Gang
    New search for: Wang, Die
    New search for: Qiao, Fen

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks

    New search for: Liang, Shuang
    New search for: He, Gang
    New search for: Wang, Die
    New search for: Qiao, Fen

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks

    Contributors:

    Liang, Shuang (author) / He, Gang (author) / Wang, Die (author) / Qiao, Fen (author)

    Published in:

    Journal of materials science & technology ; 35 ; 769-776

    Publication date:

    2019-01-01

    Size:

    8 pages

    ISSN:

    1005-0302

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.1105

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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