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Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks
Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks
Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks
Liang, Shuang (Autor:in) / He, Gang (Autor:in) / Wang, Die (Autor:in) / Qiao, Fen (Autor:in)
Journal of materials science & technology ; 35 ; 769-776
01.01.2019
8 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.1105
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