A platform for research: civil engineering, architecture and urbanism
Structural and electrical studies on Ti/Al-based Au-free ohmic contact metallization for AlGaN/GaN HEMTs
Structural and electrical studies on Ti/Al-based Au-free ohmic contact metallization for AlGaN/GaN HEMTs
Structural and electrical studies on Ti/Al-based Au-free ohmic contact metallization for AlGaN/GaN HEMTs
Guziewicz, M. (author) / Taube, A. (author) / Ekielski, M. (author) / Golaszewska, K. (author) / Zdunek, J. (author) / Bazarnik, P. (author) / Adamczyk-Cieslak, B. (author) / Szerling, A. (author)
Materials science in semiconductor processing ; 96 ; 153-160
2019-01-01
8 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2014
|Gate metal dependent electrical characteristics of AlGaN/GaN HEMTs
British Library Online Contents | 2014
|Analysis of the abnormal resistance in AlGaN/GaN heterostructure's ohmic contact tests
British Library Online Contents | 2007
|Short-channel effects in AlGAN/GaN HEMTs
British Library Online Contents | 2001
|Electron transport in passivated AlGaN/GaN/Si HEMTs
British Library Online Contents | 2013
|