A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Enabling control of matter at the atomic level: atomic layer deposition and fluorocarbon-based atomic layer etching
The diminishing size of devices has necessitated the development of new patterning, deposition and etch techniques at ever-finer resolution, now approaching the atomic scale. Current trends in device manufacturing impose stringent requirements on nanoscale processing techniques, in terms of material properties and dimensional control. At the required nanoscale dimensions, additionally, surface composition and damage will be as important as physical dimensions for the desired functionality. Ultimately, the deposition and removal of arbitrary materials with single atomic layer precision are required. In this work I will present the insights of my work into fabrication processes and characterization techniques needed in the era of controlling matter at the atomic level using atomic layer deposition (ALD) and atomic layer etching (ALE). To address the challenges in atomic scale manufacturing, a solid understanding of materials and their physical and chemical interactions is required. In this work, the synergy between materials and different fabrication processes is investigated. By studying how ALD performs on spacer defined double patterning (SDDP) I demonstrate the engineering of sub-10 nm features. SDDP is generally limited in resolution due to lack of nanoscale processes at sub-10 nm dimensions. Here, I establish how thermal ALD allows for conformal deposition of a titanium dioxide spacer layer without damaging or modifying any substrate. In conclusion, the first successful fabrication of 7.5 nm titanium oxide features using SDDP is made possible by atomic scaled processes. While ALD has become productive enough to become a mainstream technology, the etch counterpart ALE has been more challenging. Indeed, removing material one atomic layer at a time is a complex scientific problem, especially when directional etching is required. In my work, a major goal was to develop methodologies that would allow the use of existing plasma etching tools for ALE. In this context, this work establishes and evaluates a cyclic ...
Enabling control of matter at the atomic level: atomic layer deposition and fluorocarbon-based atomic layer etching
The diminishing size of devices has necessitated the development of new patterning, deposition and etch techniques at ever-finer resolution, now approaching the atomic scale. Current trends in device manufacturing impose stringent requirements on nanoscale processing techniques, in terms of material properties and dimensional control. At the required nanoscale dimensions, additionally, surface composition and damage will be as important as physical dimensions for the desired functionality. Ultimately, the deposition and removal of arbitrary materials with single atomic layer precision are required. In this work I will present the insights of my work into fabrication processes and characterization techniques needed in the era of controlling matter at the atomic level using atomic layer deposition (ALD) and atomic layer etching (ALE). To address the challenges in atomic scale manufacturing, a solid understanding of materials and their physical and chemical interactions is required. In this work, the synergy between materials and different fabrication processes is investigated. By studying how ALD performs on spacer defined double patterning (SDDP) I demonstrate the engineering of sub-10 nm features. SDDP is generally limited in resolution due to lack of nanoscale processes at sub-10 nm dimensions. Here, I establish how thermal ALD allows for conformal deposition of a titanium dioxide spacer layer without damaging or modifying any substrate. In conclusion, the first successful fabrication of 7.5 nm titanium oxide features using SDDP is made possible by atomic scaled processes. While ALD has become productive enough to become a mainstream technology, the etch counterpart ALE has been more challenging. Indeed, removing material one atomic layer at a time is a complex scientific problem, especially when directional etching is required. In my work, a major goal was to develop methodologies that would allow the use of existing plasma etching tools for ALE. In this context, this work establishes and evaluates a cyclic ...
Enabling control of matter at the atomic level: atomic layer deposition and fluorocarbon-based atomic layer etching
Dallorto, Stefano (author) / Rangelow, Ivo W. / Schwartzberg, Adam / Strehle, Steffen
2020-01-17
Theses
Electronic Resource
English
Atomic layer etching of germanium
| British Library Online Contents | 1997
Surface chemistry of materials deposition at atomic layer level
| British Library Online Contents | 1996
Surface chemistry of materials deposition at atomic layer level
| British Library Online Contents | 1996