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Oxide sputtered film, method for manufacturing oxide sputtered film, oxide sintered compact, and transparent resin substrate
The purpose of the present invention is to provide an oxide sputtered film having excellent transparency and good water vapor barrier performance and oxygen barrier performance in high-mass-productivity direct-current sputtering, a method for manufacturing an oxide sputtered film, an oxide sintered compact, and a transparent resin substrate. An oxide sputtered film which contains Zn and Sn, is amorphous and transparent, and has water vapor barrier performance or oxygen barrier performance, the oxide sputtered film being characterized in that the ratio Sn/(Zn + Sn) of the number of metal atomsof Zn and Sn therein is 0.18 to 0.29.
本发明的目的在于提供通过量产性高的直流溅射而具有优异的透明性、良好的水蒸气阻隔性能、氧阻隔性能的氧化物溅射膜、氧化物溅射膜的制造方法、氧化物烧结体和透明树脂基板。一种氧化物溅射膜,其特征在于,其为含有Zn与Sn的非晶质透明的具有水蒸气阻隔性能或氧阻隔性能的氧化物溅射膜,上述Zn与Sn的金属原子数比的Sn/(Zn+Sn)为0.18以上0.29以下。
Oxide sputtered film, method for manufacturing oxide sputtered film, oxide sintered compact, and transparent resin substrate
The purpose of the present invention is to provide an oxide sputtered film having excellent transparency and good water vapor barrier performance and oxygen barrier performance in high-mass-productivity direct-current sputtering, a method for manufacturing an oxide sputtered film, an oxide sintered compact, and a transparent resin substrate. An oxide sputtered film which contains Zn and Sn, is amorphous and transparent, and has water vapor barrier performance or oxygen barrier performance, the oxide sputtered film being characterized in that the ratio Sn/(Zn + Sn) of the number of metal atomsof Zn and Sn therein is 0.18 to 0.29.
本发明的目的在于提供通过量产性高的直流溅射而具有优异的透明性、良好的水蒸气阻隔性能、氧阻隔性能的氧化物溅射膜、氧化物溅射膜的制造方法、氧化物烧结体和透明树脂基板。一种氧化物溅射膜,其特征在于,其为含有Zn与Sn的非晶质透明的具有水蒸气阻隔性能或氧阻隔性能的氧化物溅射膜,上述Zn与Sn的金属原子数比的Sn/(Zn+Sn)为0.18以上0.29以下。
Oxide sputtered film, method for manufacturing oxide sputtered film, oxide sintered compact, and transparent resin substrate
氧化物溅射膜、氧化物溅射膜的制造方法、氧化物烧结体和透明树脂基板
KUWAHARA MASAKAZU (author) / NITO SHIGEO (author)
2020-09-15
Patent
Electronic Resource
Chinese
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