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COMPOSITE SINTERED BODY, COMPONENT OF SEMICONDUCTOR MANUFACTURING DEVICE AND METHOD FOR MANUFACTURING COMPOSITE SINTERED BODY
A method for manufacturing a composite sintered body, said method comprising: a step for molding a powder mixture, which is prepared by mixing Al2O3, SiC and MgO, into a molded article in a preset shape (step S11); and a step for sintering the molded article to give a composite sintered body (step S12). In step S11, the ratio of SiC is 4.0-13.0 wt% inclusive relative to the powder mixture. In stepS11, the purity of Al2O3 is 99.9% or higher. Thus, the growth of abnormal Al2O3 grains can be prevented and, at the same time, a composite sintered body having a high relative dielectric constant, ahigh withstand voltage and a low tandelta can be appropriately manufactured.
复合烧结体的制造方法具备：将混合AlO、SiC以及MgO而得到的混合粉末成型为规定形状的成型体的工序(步骤S11)、以及将该成型体烧成而生成复合烧结体的工序(步骤S12)。并且，步骤S11中，SiC相对于混合粉末的比例为4.0重量％以上且13.0重量％以下。另外，步骤S11中的AlO的纯度为99.9％以上。由此，能够抑制AlO的异常粒生长，并且，能够很好地制造具有高相对介电常数及耐电压、以及低tanδ的复合烧结体。
COMPOSITE SINTERED BODY, COMPONENT OF SEMICONDUCTOR MANUFACTURING DEVICE AND METHOD FOR MANUFACTURING COMPOSITE SINTERED BODY
A method for manufacturing a composite sintered body, said method comprising: a step for molding a powder mixture, which is prepared by mixing Al2O3, SiC and MgO, into a molded article in a preset shape (step S11); and a step for sintering the molded article to give a composite sintered body (step S12). In step S11, the ratio of SiC is 4.0-13.0 wt% inclusive relative to the powder mixture. In stepS11, the purity of Al2O3 is 99.9% or higher. Thus, the growth of abnormal Al2O3 grains can be prevented and, at the same time, a composite sintered body having a high relative dielectric constant, ahigh withstand voltage and a low tandelta can be appropriately manufactured.
复合烧结体的制造方法具备：将混合AlO、SiC以及MgO而得到的混合粉末成型为规定形状的成型体的工序(步骤S11)、以及将该成型体烧成而生成复合烧结体的工序(步骤S12)。并且，步骤S11中，SiC相对于混合粉末的比例为4.0重量％以上且13.0重量％以下。另外，步骤S11中的AlO的纯度为99.9％以上。由此，能够抑制AlO的异常粒生长，并且，能够很好地制造具有高相对介电常数及耐电压、以及低tanδ的复合烧结体。
COMPOSITE SINTERED BODY, COMPONENT OF SEMICONDUCTOR MANUFACTURING DEVICE AND METHOD FOR MANUFACTURING COMPOSITE SINTERED BODY
复合烧结体、半导体制造装置部件及复合烧结体的制造方法
NAGAI ASUMI (author) / INOUE KATSUHIRO (author) / KATSUDA YUJI (author)
2020-09-25
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
/
B25B
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