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Method for eutectic-welding box dam on silicon nitride ceramic substrate
The invention discloses a method for eutectic-welding a box dam on a silicon nitride ceramic substrate. The method comprises the following steps: step one, printing a metal circuit coating on an aluminum nitride ceramic substrate by a thick film printing technology, wherein the shape of the metal circuit coating is matched with the shape of a box dam to be welded on an aluminum nitride ceramic substrate; step two, putting the aluminum nitride ceramic substrate and the box dam into an eutectic welding device; step three, placing alloy solder on the metal circuit coating on the aluminum nitrideceramic substrate, and then printing or placing the box dam on the aluminum nitride ceramic substrate, wherein the alloy solder is arranged between the box dam and the metal circuit coating, and the box dam corresponds to the metal circuit coating in shape; step four, starting the eutectic welding device to carry out welding at a temperature of 150 DEG C to 500 DEG C; and step five, completing thewelding. A eutectic welding mode is adopted for welding a box dam on an aluminum nitride ceramic substrate, compared with magnetron sputtering in the prior art, the operation is more convenient, andthe cost is lower.
本发明公开了一种氮化铝陶瓷基板上围坝的共晶焊接方法，包括如下步骤：第一步，将氮化铝陶瓷基板通过厚膜印刷技术印刷出金属线路涂层，该金属线路涂层形状与需要焊接到氮化铝陶瓷基板上的围坝的形状适配；第二步，将所述氮化铝陶瓷基板和所述围坝放入到共晶焊接装置中；第三步，在所述氮化铝陶瓷基板的金属线路涂层上放置合金焊料，再将所述围坝隔着所述合金焊料印刷或放置到所述氮化铝陶瓷基板上，所述围坝与所述金属线路涂层的形状对应；第四步，启动所述共晶焊接装置进行焊接，且焊接的温度为150℃‑500℃；第五步，焊接完成。本发明针对氮化铝陶瓷的围坝焊接采用共晶焊接的方式进行焊接，相对于现有技术中采用磁控溅射，更加方便操作，成本更低。
Method for eutectic-welding box dam on silicon nitride ceramic substrate
The invention discloses a method for eutectic-welding a box dam on a silicon nitride ceramic substrate. The method comprises the following steps: step one, printing a metal circuit coating on an aluminum nitride ceramic substrate by a thick film printing technology, wherein the shape of the metal circuit coating is matched with the shape of a box dam to be welded on an aluminum nitride ceramic substrate; step two, putting the aluminum nitride ceramic substrate and the box dam into an eutectic welding device; step three, placing alloy solder on the metal circuit coating on the aluminum nitrideceramic substrate, and then printing or placing the box dam on the aluminum nitride ceramic substrate, wherein the alloy solder is arranged between the box dam and the metal circuit coating, and the box dam corresponds to the metal circuit coating in shape; step four, starting the eutectic welding device to carry out welding at a temperature of 150 DEG C to 500 DEG C; and step five, completing thewelding. A eutectic welding mode is adopted for welding a box dam on an aluminum nitride ceramic substrate, compared with magnetron sputtering in the prior art, the operation is more convenient, andthe cost is lower.
本发明公开了一种氮化铝陶瓷基板上围坝的共晶焊接方法，包括如下步骤：第一步，将氮化铝陶瓷基板通过厚膜印刷技术印刷出金属线路涂层，该金属线路涂层形状与需要焊接到氮化铝陶瓷基板上的围坝的形状适配；第二步，将所述氮化铝陶瓷基板和所述围坝放入到共晶焊接装置中；第三步，在所述氮化铝陶瓷基板的金属线路涂层上放置合金焊料，再将所述围坝隔着所述合金焊料印刷或放置到所述氮化铝陶瓷基板上，所述围坝与所述金属线路涂层的形状对应；第四步，启动所述共晶焊接装置进行焊接，且焊接的温度为150℃‑500℃；第五步，焊接完成。本发明针对氮化铝陶瓷的围坝焊接采用共晶焊接的方式进行焊接，相对于现有技术中采用磁控溅射，更加方便操作，成本更低。
Method for eutectic-welding box dam on silicon nitride ceramic substrate
氮化铝陶瓷基板上围坝的共晶焊接方法
ZHOU KONGLI (author)
2020-10-20
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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