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Preparation method of silicon nitride ceramic substrate
The invention provides a preparation method of a silicon nitride ceramic substrate. The preparation method comprises the following steps: S1, carrying out roll forming on alpha-Si3N4 powder, beta-Si3N4 whiskers, h-BN powder, a sintering aid and a binder to prepare a flaky green body in which the beta-Si3N4 whiskers are directionally arranged; s2, degreasing the flaky green body to obtain a degreased green body; and S3, performing air pressure sintering on the degreased green body so that alpha-Si3N4 is subjected to phase change under induction of the beta-Si3N4 whiskers, oriented growth of beta-Si3N4 crystal grains is promoted, and the silicon nitride ceramic substrate with directionally-arranged beta-Si3N4 rod-shaped crystal grains is prepared. According to the invention, the problem of poor heat dissipation performance of the silicon nitride ceramic substrate material caused by disordered arrangement of silicon nitride rod-like grains in the existing silicon nitride ceramic substrateis solved.
本发明提供了一种氮化硅陶瓷基片的制备方法，包括如下步骤：步骤S1、将α‑Si3N4粉末、β‑Si3N4晶须、h‑BN粉末、烧结助剂和粘结剂通过辊压成型，制备得到β‑Si3N4晶须定向排列的片状坯体；步骤S2、将所述片状坯体经过脱脂处理后，得到脱脂坯体；步骤S3、将所述脱脂坯体进行气压烧结，使α‑Si3N4在所述β‑Si3N4晶须的诱导下发生相变并促进β‑Si3N4晶粒的取向生长，制备得到β‑Si3N4棒状晶粒定向排列的氮化硅陶瓷基片。本发明解决了现有的氮化硅陶瓷基片中氮化硅棒状晶粒杂乱排布，导致氮化硅陶瓷基片材料的散热性能不佳的问题。
Preparation method of silicon nitride ceramic substrate
The invention provides a preparation method of a silicon nitride ceramic substrate. The preparation method comprises the following steps: S1, carrying out roll forming on alpha-Si3N4 powder, beta-Si3N4 whiskers, h-BN powder, a sintering aid and a binder to prepare a flaky green body in which the beta-Si3N4 whiskers are directionally arranged; s2, degreasing the flaky green body to obtain a degreased green body; and S3, performing air pressure sintering on the degreased green body so that alpha-Si3N4 is subjected to phase change under induction of the beta-Si3N4 whiskers, oriented growth of beta-Si3N4 crystal grains is promoted, and the silicon nitride ceramic substrate with directionally-arranged beta-Si3N4 rod-shaped crystal grains is prepared. According to the invention, the problem of poor heat dissipation performance of the silicon nitride ceramic substrate material caused by disordered arrangement of silicon nitride rod-like grains in the existing silicon nitride ceramic substrateis solved.
本发明提供了一种氮化硅陶瓷基片的制备方法，包括如下步骤：步骤S1、将α‑Si3N4粉末、β‑Si3N4晶须、h‑BN粉末、烧结助剂和粘结剂通过辊压成型，制备得到β‑Si3N4晶须定向排列的片状坯体；步骤S2、将所述片状坯体经过脱脂处理后，得到脱脂坯体；步骤S3、将所述脱脂坯体进行气压烧结，使α‑Si3N4在所述β‑Si3N4晶须的诱导下发生相变并促进β‑Si3N4晶粒的取向生长，制备得到β‑Si3N4棒状晶粒定向排列的氮化硅陶瓷基片。本发明解决了现有的氮化硅陶瓷基片中氮化硅棒状晶粒杂乱排布，导致氮化硅陶瓷基片材料的散热性能不佳的问题。
Preparation method of silicon nitride ceramic substrate
一种氮化硅陶瓷基片的制备方法
DUAN XIAOMING (author) / ZHANG ZHUO (author) / JIA DECHANG (author) / YANG ZHIHUA (author) / HE PEIGANG (author) / ZHOU YU (author)
2021-03-30
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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