A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Oxide target material and preparation method thereof
The invention provides an oxide target material and a preparation method thereof. The oxide target material comprises an oxide metal composition, which comprises In2O3, Ga2O3, ZnO and Pr6O11, whereinthe Pr6O11 accounts for 0.5-1.5% of the weight of the oxide target material, and the oxide metal composition is molded and sintered to obtain the oxide target material. According to the invention, after the oxide target material is matched with In2O3, Ga2O3, ZnO and Pr6O11, the Hall carrier mobility of an oxide target material film prepared through sputtering reaches mu of 30-40 cm<2>/V.s, compared with an IGZO film, the Hall carrier mobility is remarkably improved, growth on a flexible substrate is facilitated, the cost is low, a prepared flat panel display is low in energy consumption and high in reliability, and the oxide target material as a film transistor channel layer material has a wide application prospect in the fields of electronic paper, liquid crystal display (LCD) and other new-generation flat panels and flexible display.
本发明提供了一种氧化物靶材及其制备方法，所述氧化物靶材包括氧化金属组合物，所述氧化金属组合物包括In2O3、Ga2O3、ZnO和Pr6O11，所述Pr6O11占所述氧化物靶材重量的0.5％～1.5％，所述氧化金属组合物成型烧结得到所述氧化物靶材。本发明的氧化物靶材搭配In2O3、Ga2O3、ZnO和Pr6O11后，通过溅射制备的氧化物靶材薄膜的霍尔载流子迁移率达到了μ＝30～40cm2/V·s，与IGZO薄膜相比，霍尔载流子迁移率获得了显著的提升，便于在柔性基底上生长，成本低廉，制备的平面显示器耗能低，作为薄膜晶体管沟道层材料，在电子纸张、液晶显示(LCD)等新一代平板和柔性显示领域具有广阔的应用前景。
Oxide target material and preparation method thereof
The invention provides an oxide target material and a preparation method thereof. The oxide target material comprises an oxide metal composition, which comprises In2O3, Ga2O3, ZnO and Pr6O11, whereinthe Pr6O11 accounts for 0.5-1.5% of the weight of the oxide target material, and the oxide metal composition is molded and sintered to obtain the oxide target material. According to the invention, after the oxide target material is matched with In2O3, Ga2O3, ZnO and Pr6O11, the Hall carrier mobility of an oxide target material film prepared through sputtering reaches mu of 30-40 cm<2>/V.s, compared with an IGZO film, the Hall carrier mobility is remarkably improved, growth on a flexible substrate is facilitated, the cost is low, a prepared flat panel display is low in energy consumption and high in reliability, and the oxide target material as a film transistor channel layer material has a wide application prospect in the fields of electronic paper, liquid crystal display (LCD) and other new-generation flat panels and flexible display.
本发明提供了一种氧化物靶材及其制备方法，所述氧化物靶材包括氧化金属组合物，所述氧化金属组合物包括In2O3、Ga2O3、ZnO和Pr6O11，所述Pr6O11占所述氧化物靶材重量的0.5％～1.5％，所述氧化金属组合物成型烧结得到所述氧化物靶材。本发明的氧化物靶材搭配In2O3、Ga2O3、ZnO和Pr6O11后，通过溅射制备的氧化物靶材薄膜的霍尔载流子迁移率达到了μ＝30～40cm2/V·s，与IGZO薄膜相比，霍尔载流子迁移率获得了显著的提升，便于在柔性基底上生长，成本低廉，制备的平面显示器耗能低，作为薄膜晶体管沟道层材料，在电子纸张、液晶显示(LCD)等新一代平板和柔性显示领域具有广阔的应用前景。
Oxide target material and preparation method thereof
一种氧化物靶材及其制备方法
SHAO XUELIANG (author) / TAN YONGJIAN (author) / TONG PEIYUN (author) / ZHU LIU (author)
2021-02-02
Patent
Electronic Resource
Chinese
Oxide rotating target material and preparation method thereof
| European Patent Office | 2021
Indium oxide target material and preparation method thereof
| European Patent Office | 2022
Zinc oxide target material and preparation method thereof
| European Patent Office | 2024