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Oxide target material and preparation method thereof
The invention belongs to the technical field of target materials, and discloses an oxide target material and a preparation method thereof.The preparation method comprises the following steps that indium oxide, cerium oxide, titanium oxide, tantalum oxide, a dispersing agent and a binding agent are mixed and then ground, and slurry A is obtained; spraying the granulation slurry A to obtain granulation powder; pressing into granulated powder to obtain a target material blank; sintering the target blank in an oxygen-containing atmosphere; and sintering the target blank at a relatively high temperature T1 and a temperature T2 which is 50-300 DEG C lower than the temperature T1 in sequence. By optimizing the sintering process, the temperature is increased to T1 to enable the sintering temperature to reach the critical density of the target material, then the temperature is decreased immediately, heat preservation is conducted at T2 50-200 DEG C lower than the temperature T1, the grain growth rate can be reduced, air holes in a target material blank are slowly discharged, and the high-density and fine-grain target material is obtained by improving the sintering process.
本发明属于靶材技术领域，公开了一种氧化物靶材及其制备方法，包括如下步骤：混合混合氧化铟、氧化铈、氧化钛、氧化钽、分散剂、粘结剂后研磨得到浆料A；喷雾造粒浆料A得到造粒粉；压制造粒粉，制得靶材坯体；于含氧气氛下烧结靶材胚体；靶材胚体依次经过较高的温度T1和低于T1温度50~300℃的T2温度进行烧结。通过优化烧结工艺，先升温至T1使烧结温度达到靶材的临界致密度，然后马上降温，在低于T1温度50~200℃的T2下保温，可降低晶粒生长的速率，缓慢排出靶材坯体内气孔，通过改良烧结工艺，获得高密度、细晶粒的靶材。
Oxide target material and preparation method thereof
The invention belongs to the technical field of target materials, and discloses an oxide target material and a preparation method thereof.The preparation method comprises the following steps that indium oxide, cerium oxide, titanium oxide, tantalum oxide, a dispersing agent and a binding agent are mixed and then ground, and slurry A is obtained; spraying the granulation slurry A to obtain granulation powder; pressing into granulated powder to obtain a target material blank; sintering the target blank in an oxygen-containing atmosphere; and sintering the target blank at a relatively high temperature T1 and a temperature T2 which is 50-300 DEG C lower than the temperature T1 in sequence. By optimizing the sintering process, the temperature is increased to T1 to enable the sintering temperature to reach the critical density of the target material, then the temperature is decreased immediately, heat preservation is conducted at T2 50-200 DEG C lower than the temperature T1, the grain growth rate can be reduced, air holes in a target material blank are slowly discharged, and the high-density and fine-grain target material is obtained by improving the sintering process.
本发明属于靶材技术领域，公开了一种氧化物靶材及其制备方法，包括如下步骤：混合混合氧化铟、氧化铈、氧化钛、氧化钽、分散剂、粘结剂后研磨得到浆料A；喷雾造粒浆料A得到造粒粉；压制造粒粉，制得靶材坯体；于含氧气氛下烧结靶材胚体；靶材胚体依次经过较高的温度T1和低于T1温度50~300℃的T2温度进行烧结。通过优化烧结工艺，先升温至T1使烧结温度达到靶材的临界致密度，然后马上降温，在低于T1温度50~200℃的T2下保温，可降低晶粒生长的速率，缓慢排出靶材坯体内气孔，通过改良烧结工艺，获得高密度、细晶粒的靶材。
Oxide target material and preparation method thereof
一种氧化物靶材及其制备方法
ZHANG GAOXIANG (author) / WANG QIFENG (author) / LI KAIJIE (author) / XIONG HAO (author) / TAN HONGLEI (author)
2024-10-15
Patent
Electronic Resource
Chinese
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