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Preparation method of high-density ITO target material
The invention discloses a preparation method of a high-density ITO target material. The preparation method comprises the following steps: preparing a solution with a preset concentration; adding a solution with a preset mass percent into the ITO powder, and grinding and dispersing to obtain slurry of the ITO powder; and putting the slurry into a mold, applying ultrasonic oscillation pressure, heating the mold to a preset temperature, and keeping the temperature and the pressure for a specific time to obtain the compact ITO target material. According to the process, the target material with the relative density higher than 93% is prepared at the temperature smaller than or equal to 400 DEG C, the target material with fine crystal grains (smaller than 100 nm, the crystal grain size and the resistivity of 10 <-4 > Omega .cm < 2 >) can be obtained, the temperature is lowered by 1000 DEG C compared with traditional high-temperature sintering, energy consumption is effectively reduced, and the preparation period of the ITO target material is shortened.
本发明公开了一种高密度ITO靶材的制备方法，通过配制预设浓度的溶液；向ITO粉体中添加预设质量百分比的溶液，并经研磨分散得到ITO粉体的浆料；将浆料放入模具中，施加超声波振荡压力，同时将模具升温加热至预设温度，并保温保压特定时间，得到致密ITO靶材。上述工艺在≤400℃下制备出相对密度高于93％的靶材，有利于得到晶粒细小的靶材(＜100nm,晶粒尺寸，电阻率10‑4Ω˙cm2)，本发明较传统高温烧结降低了1000℃，有效降低了能源的消耗，缩短了ITO靶材的制备周期。
Preparation method of high-density ITO target material
The invention discloses a preparation method of a high-density ITO target material. The preparation method comprises the following steps: preparing a solution with a preset concentration; adding a solution with a preset mass percent into the ITO powder, and grinding and dispersing to obtain slurry of the ITO powder; and putting the slurry into a mold, applying ultrasonic oscillation pressure, heating the mold to a preset temperature, and keeping the temperature and the pressure for a specific time to obtain the compact ITO target material. According to the process, the target material with the relative density higher than 93% is prepared at the temperature smaller than or equal to 400 DEG C, the target material with fine crystal grains (smaller than 100 nm, the crystal grain size and the resistivity of 10 <-4 > Omega .cm < 2 >) can be obtained, the temperature is lowered by 1000 DEG C compared with traditional high-temperature sintering, energy consumption is effectively reduced, and the preparation period of the ITO target material is shortened.
本发明公开了一种高密度ITO靶材的制备方法，通过配制预设浓度的溶液；向ITO粉体中添加预设质量百分比的溶液，并经研磨分散得到ITO粉体的浆料；将浆料放入模具中，施加超声波振荡压力，同时将模具升温加热至预设温度，并保温保压特定时间，得到致密ITO靶材。上述工艺在≤400℃下制备出相对密度高于93％的靶材，有利于得到晶粒细小的靶材(＜100nm,晶粒尺寸，电阻率10‑4Ω˙cm2)，本发明较传统高温烧结降低了1000℃，有效降低了能源的消耗，缩短了ITO靶材的制备周期。
Preparation method of high-density ITO target material
一种高密度ITO靶材的制备方法
ZHU GUISHENG (author) / LONG SHENFENG (author) / XU HUARUI (author) / ZHAO YUNYUN (author)
2021-10-01
Patent
Electronic Resource
Chinese
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