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Method for preparing nitrogen-doped conductive silicon carbide ceramic by spark plasma sintering
The invention discloses a method for preparing nitrogen-doped conductive silicon carbide ceramic by spark plasma sintering. The method comprises the following steps: 1) ball-milling and mixing: carrying out wet ball-milling on aluminum oxide, yttrium oxide and silicon carbide powder by using zirconium oxide balls in a zirconium oxide ball-milling tank; 2) powder drying and assembling: 2.1) filtering and screening the ball-milled mixed powder, pouring into a glass container, drying in a drying box at 50-70 DEG C for 6 hours, and manually crushing the dried powder by using a mortar; 2.2) assembling the mixed and dried powder, wherein an assembling container comprises a graphite mold and a graphite pressure head; and (2.3) prepressing the assembled powder by adopting a tablet press; and (3) high-temperature sintering: placing the pre-pressed powder in a discharge plasma sintering furnace for high-temperature sintering. By adopting the spark plasma sintering method, the silicon carbide ceramic with low resistivity and excellent mechanical properties can be prepared within a short time, and accurate regulation and control of the resistivity can be realized.
本发明公开了采用放电等离子烧结制备氮掺杂导电碳化硅陶瓷的方法,包括如下步骤:1)球磨混料:在氧化锆球磨罐中用氧化锆球对氧化铝、氧化钇和碳化硅粉末进行湿法球磨;2)粉末干燥与装配:2.1)球磨后的混合粉末进行过滤筛分,倒入玻璃容器内,然后置于干燥箱中于50~70℃下干燥6h,干燥以后的粉末再用研钵进行手工粉碎;2.2)将混合干燥以后的粉末进行装配,装配容器包括石墨模具和石墨压头;2.3)采用压片机对装配好后的粉末进行预压;3)高温烧结:将预压后的粉末置于放电等离子烧结炉中进行高温烧结。本发明采用放电等离子烧结方法,不仅在较短时间内便可制备出低电阻率和力学性能优良的碳化硅陶瓷,并且可以实现电阻率的精确调控。
Method for preparing nitrogen-doped conductive silicon carbide ceramic by spark plasma sintering
The invention discloses a method for preparing nitrogen-doped conductive silicon carbide ceramic by spark plasma sintering. The method comprises the following steps: 1) ball-milling and mixing: carrying out wet ball-milling on aluminum oxide, yttrium oxide and silicon carbide powder by using zirconium oxide balls in a zirconium oxide ball-milling tank; 2) powder drying and assembling: 2.1) filtering and screening the ball-milled mixed powder, pouring into a glass container, drying in a drying box at 50-70 DEG C for 6 hours, and manually crushing the dried powder by using a mortar; 2.2) assembling the mixed and dried powder, wherein an assembling container comprises a graphite mold and a graphite pressure head; and (2.3) prepressing the assembled powder by adopting a tablet press; and (3) high-temperature sintering: placing the pre-pressed powder in a discharge plasma sintering furnace for high-temperature sintering. By adopting the spark plasma sintering method, the silicon carbide ceramic with low resistivity and excellent mechanical properties can be prepared within a short time, and accurate regulation and control of the resistivity can be realized.
本发明公开了采用放电等离子烧结制备氮掺杂导电碳化硅陶瓷的方法,包括如下步骤:1)球磨混料:在氧化锆球磨罐中用氧化锆球对氧化铝、氧化钇和碳化硅粉末进行湿法球磨;2)粉末干燥与装配:2.1)球磨后的混合粉末进行过滤筛分,倒入玻璃容器内,然后置于干燥箱中于50~70℃下干燥6h,干燥以后的粉末再用研钵进行手工粉碎;2.2)将混合干燥以后的粉末进行装配,装配容器包括石墨模具和石墨压头;2.3)采用压片机对装配好后的粉末进行预压;3)高温烧结:将预压后的粉末置于放电等离子烧结炉中进行高温烧结。本发明采用放电等离子烧结方法,不仅在较短时间内便可制备出低电阻率和力学性能优良的碳化硅陶瓷,并且可以实现电阻率的精确调控。
Method for preparing nitrogen-doped conductive silicon carbide ceramic by spark plasma sintering
采用放电等离子烧结制备氮掺杂导电碳化硅陶瓷的方法
LI HUAXIN (author) / SHEN WEIJIAN (author) / YANG JIANGUO (author) / HE YANMING (author) / ZHENG WENJIAN (author) / LYU CHUANYANG (author) / MA YINGHE (author) / ZHENG YONG (author) / WEI LIANFENG (author)
2021-12-03
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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