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Sintered aluminum nitride and member for semiconductor manufacturing device comprising same
The aluminum nitride sintered body contains 1 to 5 wt% of yttrium oxide (Y2O3), 10 to 100 ppm of titanium (Ti), and the balance of aluminum nitride (AlN). As a result, the volume resistance and thermal conductivity at high temperatures can be improved, and the occurrence of impurities in the semiconductor manufacturing step can be suppressed.
氮化铝烧结体包含1～5重量％的氧化钇(Y2O3)、10～100ppm的钛(Ti)及余份的氮化铝(AlN)。由此，可以改善高温下的体积电阻值及导热率，抑制半导体制造步骤中杂质的发生。
Sintered aluminum nitride and member for semiconductor manufacturing device comprising same
The aluminum nitride sintered body contains 1 to 5 wt% of yttrium oxide (Y2O3), 10 to 100 ppm of titanium (Ti), and the balance of aluminum nitride (AlN). As a result, the volume resistance and thermal conductivity at high temperatures can be improved, and the occurrence of impurities in the semiconductor manufacturing step can be suppressed.
氮化铝烧结体包含1～5重量％的氧化钇(Y2O3)、10～100ppm的钛(Ti)及余份的氮化铝(AlN)。由此，可以改善高温下的体积电阻值及导热率，抑制半导体制造步骤中杂质的发生。
Sintered aluminum nitride and member for semiconductor manufacturing device comprising same
氮化铝烧结体及包括其的半导体制造装置用构件
CHAE JE-HO (author) / PARK HYO-SUNG (author) / AHN DUCK-WON (author) / KANG TAE-HEE (author)
2022-11-11
Patent
Electronic Resource
Chinese
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