A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
ALUMINUM NITRIDE SINTERED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACUTING APPARATUS COMPRISING SAME
An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.
L'invention concerne un corps fritté en nitrure d'aluminium qui contient 1 à 5 % en poids d'oxyde d'yttrium (Y2O3), 10 à 100 ppm en poids de titane (Ti), le reste étant du nitrure d'aluminium (AlN). Ainsi, la valeur de résistance volumique et la conductivité thermique à haute température sont améliorées, et la production d'impuretés pendant un processus de fabrication de semiconducteurs peut être supprimée.
질화 알루미늄 소결체는, 1 내지 5 중량%의 산화 이트륨(Y2O3), 10 내지 100 중량 ppm의 티타늄(Ti) 및 여분의 질화 알루미늄(AlN)을 포함한다. 이로써, 고온에서의 체적 저항값 및 열전도율이 개선되며, 반도체 제조 공정 중 불순물의 발생이 억제될 수 있다.
ALUMINUM NITRIDE SINTERED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACUTING APPARATUS COMPRISING SAME
An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.
L'invention concerne un corps fritté en nitrure d'aluminium qui contient 1 à 5 % en poids d'oxyde d'yttrium (Y2O3), 10 à 100 ppm en poids de titane (Ti), le reste étant du nitrure d'aluminium (AlN). Ainsi, la valeur de résistance volumique et la conductivité thermique à haute température sont améliorées, et la production d'impuretés pendant un processus de fabrication de semiconducteurs peut être supprimée.
질화 알루미늄 소결체는, 1 내지 5 중량%의 산화 이트륨(Y2O3), 10 내지 100 중량 ppm의 티타늄(Ti) 및 여분의 질화 알루미늄(AlN)을 포함한다. 이로써, 고온에서의 체적 저항값 및 열전도율이 개선되며, 반도체 제조 공정 중 불순물의 발생이 억제될 수 있다.
ALUMINUM NITRIDE SINTERED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACUTING APPARATUS COMPRISING SAME
CORPS FRITTÉ EN NITRURE D'ALUMINIUM ET ÉLÉMENT POUR APPAREIL DE FABRICATION DE SEMICONDUCTEURS LE COMPRENANT
질화 알루미늄 소결체 및 이를 포함하는 반도체 제조 장치용 부재
CHAE JE HO (author) / PARK HYO SUNG (author) / AHN DUCK WON (author) / KANG TAE HEE (author)
2019-01-03
Patent
Electronic Resource
Korean
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