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A platform for research: civil engineering, architecture and urbanism
ALUMINUM NITRIDE SINTERED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACUTING APPARATUS COMPRISING SAME
An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.
ALUMINUM NITRIDE SINTERED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACUTING APPARATUS COMPRISING SAME
An aluminum nitride sintered body contains 1 to 5% by weight of yttrium oxide (Y2O3), 10 to 100 ppm by weight of titanium (Ti), and the balance being aluminum nitride (AlN). Accordingly, a volume resistance value and thermal conductivity at a high temperature are improved, and the generation of impurities during a semiconductor manufacturing process can be suppressed.
ALUMINUM NITRIDE SINTERED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACUTING APPARATUS COMPRISING SAME
CHAE JE HO (author) / PARK HYO SUNG (author) / AHN DUCK WON (author) / KANG TAE HEE (author)
2020-09-24
Patent
Electronic Resource
English
ALUMINUM NITRIDE SINTERED BODY AND MEMBER FOR SEMICONDUCTOR MANUFACUTING APPARATUS COMPRISING SAME
| European Patent Office | 2019
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Aluminum nitride sintered body and member for semiconductor manufacuting apparatus comprising same
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Member for semiconductor manufacturing apparatus including aluminum nitride sintered body
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Sintered aluminum nitride and member for semiconductor manufacturing device comprising same
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