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Method for preparing silicon nitride ceramic substrate isolation layer by using silicon nitride ultrathin cast film tape
The invention discloses a method for preparing a silicon nitride ceramic substrate isolation layer from a silicon nitride ultrathin cast film tape, which comprises the following steps: S1, mixing silicon nitride isolation powder with a dispersant, a solvent and a binder according to a mass ratio of (50-60): (1-60): (80-100): (50-60), and carrying out ball milling to prepare slurry; s2, defoaming the prepared slurry by using a vacuum defoaming machine until the viscosity reaches 3 # 6r: (1000-2000) mpa.s; s3, the defoamed slurry is subjected to tape casting in a tape casting machine, and a thin film with the thickness of 10-50 microns is prepared; the method for preparing the isolation layer of the silicon nitride ceramic substrate by using the silicon nitride ultrathin cast film tape comprises the following steps: mixing silicon nitride isolation powder with a dispersing agent, a solvent and a binding agent according to mass percent to prepare a thin film, and covering one side of the substrate with the thin film; the phenomena of sedimentation, agglomeration and uneven spraying in the spraying process when the isolation powder in a suspension state is prepared into the release agent can be prevented, and meanwhile chemical reaction between the isolation powder and a substrate during high-temperature sintering can be prevented.
本发明公开了一种氮化硅超薄流延膜带制备氮化硅陶瓷基板隔离层的方法，包括以下步骤：S1、将氮化硅隔离粉与分散剂、溶剂、粘结剂按质量比例50~60:1~60:80~100:50~60混合进行球磨，制备成浆料；S2、将制备好的浆料用真空消泡机消泡，使粘度达到3#6r：1000~2000mpa.s；S3、将消泡好的浆料进流延机流延，制成厚度10~50μm的薄膜；本发明所述的氮化硅超薄流延膜带制备氮化硅陶瓷基板隔离层的方法通过先将氮化硅隔离粉与分散剂、溶剂、粘结剂按质量百分比混合后制成薄膜，再将薄膜覆在基板的一侧；本发明能防止呈悬浮液状态的隔离粉制备成脱模剂时，在喷涂过程中发生沉降、团聚及喷涂不均匀的现象，同时又能防止高温烧结时隔离粉与基板发生化学反应。
Method for preparing silicon nitride ceramic substrate isolation layer by using silicon nitride ultrathin cast film tape
The invention discloses a method for preparing a silicon nitride ceramic substrate isolation layer from a silicon nitride ultrathin cast film tape, which comprises the following steps: S1, mixing silicon nitride isolation powder with a dispersant, a solvent and a binder according to a mass ratio of (50-60): (1-60): (80-100): (50-60), and carrying out ball milling to prepare slurry; s2, defoaming the prepared slurry by using a vacuum defoaming machine until the viscosity reaches 3 # 6r: (1000-2000) mpa.s; s3, the defoamed slurry is subjected to tape casting in a tape casting machine, and a thin film with the thickness of 10-50 microns is prepared; the method for preparing the isolation layer of the silicon nitride ceramic substrate by using the silicon nitride ultrathin cast film tape comprises the following steps: mixing silicon nitride isolation powder with a dispersing agent, a solvent and a binding agent according to mass percent to prepare a thin film, and covering one side of the substrate with the thin film; the phenomena of sedimentation, agglomeration and uneven spraying in the spraying process when the isolation powder in a suspension state is prepared into the release agent can be prevented, and meanwhile chemical reaction between the isolation powder and a substrate during high-temperature sintering can be prevented.
本发明公开了一种氮化硅超薄流延膜带制备氮化硅陶瓷基板隔离层的方法，包括以下步骤：S1、将氮化硅隔离粉与分散剂、溶剂、粘结剂按质量比例50~60:1~60:80~100:50~60混合进行球磨，制备成浆料；S2、将制备好的浆料用真空消泡机消泡，使粘度达到3#6r：1000~2000mpa.s；S3、将消泡好的浆料进流延机流延，制成厚度10~50μm的薄膜；本发明所述的氮化硅超薄流延膜带制备氮化硅陶瓷基板隔离层的方法通过先将氮化硅隔离粉与分散剂、溶剂、粘结剂按质量百分比混合后制成薄膜，再将薄膜覆在基板的一侧；本发明能防止呈悬浮液状态的隔离粉制备成脱模剂时，在喷涂过程中发生沉降、团聚及喷涂不均匀的现象，同时又能防止高温烧结时隔离粉与基板发生化学反应。
Method for preparing silicon nitride ceramic substrate isolation layer by using silicon nitride ultrathin cast film tape
一种氮化硅超薄流延膜带制备氮化硅陶瓷基板隔离层的方法
ZHOU XIN (author) / SHI JINFANG (author)
2022-12-02
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
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