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Sintering method of chip capacitor ceramic chip
The invention discloses a sintering method of a chip capacitor ceramic chip, the adopted tools are two zirconia plates and a plurality of ceramic chips for pad sintering, and the sintering method comprises the following steps: step 1, placing the chip capacitor ceramic chip needing to be sintered between the two zirconia plates; 2, ceramic chips with large thicknesses are placed at the four corners of the zirconium oxide plate in a cushioned mode; and step 3, putting the zirconia plate, the clamped chip capacitor ceramic chip and the pad-fired ceramic chip into a sintering furnace, wherein the sintering process is as follows: 1) a low-speed heating stage: heating to 700 DEG C at a heating rate of 0.4-0.8 DEG C/min; 2) a rapid heating stage: heating to 1100 DEG C at a heating rate of 0.9-1.3 DEG C/min; 3) constant temperature stage: keeping the temperature for 240 minutes at the highest temperature stage; 4) cooling stage: naturally cooling to room temperature from the highest temperature stage; and 4, the product is taken out of the sintering furnace and detected.
本发明公开了一种芯片电容器陶瓷片的烧结方法，采用的工具为两块氧化锆板和多块用于垫烧的陶瓷片，烧结方法包括以下步骤：步骤1：将需要烧结的芯片电容器陶瓷片放在两块氧化锆板之间；步骤2：在氧化锆板四个角分别垫放厚度较大的陶瓷片；步骤3：将氧化锆板和夹装的芯片电容器陶瓷片以及垫烧的陶瓷片放入烧结炉中，烧结过程如下：1)低速升温阶段：以0.4～0.8℃/min的升温速率升至700℃；2)快速升温阶段：以0.9～1.3℃/min的升温速率升至1100℃；3)恒温阶段：在最高温阶段恒温240min；4)降温阶段：从最高温阶段自然降温到室温；步骤4：从烧结炉中取出产品，进行检测。
Sintering method of chip capacitor ceramic chip
The invention discloses a sintering method of a chip capacitor ceramic chip, the adopted tools are two zirconia plates and a plurality of ceramic chips for pad sintering, and the sintering method comprises the following steps: step 1, placing the chip capacitor ceramic chip needing to be sintered between the two zirconia plates; 2, ceramic chips with large thicknesses are placed at the four corners of the zirconium oxide plate in a cushioned mode; and step 3, putting the zirconia plate, the clamped chip capacitor ceramic chip and the pad-fired ceramic chip into a sintering furnace, wherein the sintering process is as follows: 1) a low-speed heating stage: heating to 700 DEG C at a heating rate of 0.4-0.8 DEG C/min; 2) a rapid heating stage: heating to 1100 DEG C at a heating rate of 0.9-1.3 DEG C/min; 3) constant temperature stage: keeping the temperature for 240 minutes at the highest temperature stage; 4) cooling stage: naturally cooling to room temperature from the highest temperature stage; and 4, the product is taken out of the sintering furnace and detected.
本发明公开了一种芯片电容器陶瓷片的烧结方法，采用的工具为两块氧化锆板和多块用于垫烧的陶瓷片，烧结方法包括以下步骤：步骤1：将需要烧结的芯片电容器陶瓷片放在两块氧化锆板之间；步骤2：在氧化锆板四个角分别垫放厚度较大的陶瓷片；步骤3：将氧化锆板和夹装的芯片电容器陶瓷片以及垫烧的陶瓷片放入烧结炉中，烧结过程如下：1)低速升温阶段：以0.4～0.8℃/min的升温速率升至700℃；2)快速升温阶段：以0.9～1.3℃/min的升温速率升至1100℃；3)恒温阶段：在最高温阶段恒温240min；4)降温阶段：从最高温阶段自然降温到室温；步骤4：从烧结炉中取出产品，进行检测。
Sintering method of chip capacitor ceramic chip
一种芯片电容器陶瓷片的烧结方法
YANG KAI (author) / ZHANG YONG (author) / HWANG PIL-SANG (author) / HUANG PAN (author) / YU LIPING (author) / MU CHAO (author)
2023-05-16
Patent
Electronic Resource
Chinese
IPC:
C04B
Kalk
,
LIME
/
F27D
Einzelheiten oder Zubehör für Industrieöfen, Schachtöfen, Brennöfen oder Retorten, soweit sie nicht auf eine Ofenart eingeschränkt sind
,
DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
/
H01G
Kondensatoren
,
CAPACITORS
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